08:20-09:00
(Keynote) Battery Diagnostics and Virtual Sensors in Ferrari
Giorgio Gullone
09:00-09:40
(Keynote) An approach to Electronic Platform Complexity: the System Integration in Lamborghini
Luca Zacheo
10:00-10:20
Design-of-Experiments and ALT plan for reliability qualification of chip resistors based on mission profile of
Fatima-Ezahra Indmeskine, Laurent Saintis, Abdessamad Kobi, Hélène Marceau
10:20-10:40
Reliability Assurance in Foldable Displays: Design of Experiment-Based Testing Strategy for Market-Ready
Ui Hyo Jeong, Seongyong Lim, Seung Su Han
10:40-11:00
New statistical analysis methodology to forecast the memory cell behavior before reliability test
Perrin, Della Marca, Kempf, Bocquet, Welter, Moragues, Regnier, Portal
11:00-11:20
Condition Monitoring for Detection of Humidity-Induced Failures in Control Electronics of Power
Frederic Sehr, Stefan Wagner, Adelja Schulz, Alexander Vorwerk
10:00-10:20
Reliability analysis of high power LEDs for automotive: impact of current and temperature
Caria et.al
10:20-10:40
Aging modelling of Li-Ion Battery Systems based on accelerated tests
Toscani, Stighezza, Simonazzi, Delmonte, Cova, Bianchi, Demunari
10:40-11:00
Development challenges of a one-sided GaN-based high-current density buck converter through multiphysics optimization for electric vehicle
Mohamed Belguith, Sonia Eloued, Moncef Kadi, Jaleleddine Ben Hadj Slama
11:00-11:20
Performance characterization of lithium-ion battery and ageing under constant stress conditions at low
Ossama Rafik, Jean-Michel Vinassa, Olivier Briat, Armande Capitaine
11:20-11:40
SMART Protection Design of Automotive Power Distribution Systems with Temperature-Based Electronic Fuses: Mathematical Background, Design Guidelines and Drawbacks of Energy-Based
Mirko Bernardoni, Robert Illing, Mario Tripolt, Christian Djelassi-Tscheck
11:40-14:00
Degradation model for insulation characteristics of tantalum capacitors related to manufacturing parameters and
Xue Zhou, Mingxu Zhang, Donghui Li, Chensong Ji, Le Xu, Guofu Zhai
Research on The Degradation of Contact Resistance of Wire-Spring Contacts in Different Wear
Le Xu, Yuyao Zhao, Shujuan Wang
Reliability Design of GaN Based High-frequency Inverter Optimization
Ya Jing Zhang, Xin Yu Ao, Hong Li, Huan Chen Zhang, Xue Cong Wei, Xiu Teng Wang
Correlating time and voltage laws in BTI
Joseph Bernstein, Alain Bensoussan, Emmanuel Bender, Tsuriel Abraham
Evidence of resistive switching in SiNx thin films for MEMS capacitors: the role of metal contacts
John Theocharis, Spiros Gardelis, George Papaioannou
Recovery and Unrecovered Damage During Interrupted CVS in MFIS FE devices
Tiang Teck Tan, Tian-Li Wu, Kalya Shubhakar, Nagarajan Raghavan, Kin Leong Pey
HTRB effects on threshold instability of 4H-SiC PowerMOSFET with carrots defects
Anoldo, Tosto, Maira, Bevilacqua, Schroer, Patanè, Patanè, Russo
Thermal layout optimization of electrolytic capacitors considering degradation self-acceleration effect for reliability
Xuerong Ye, Qisen Sun, Ruyue Zhang, Junpeng Gao, Haodong Wang, Guofu Zhai
Semi-supervised parameter estimation for Synthetic Aperture Focusing in Scanning Acoustic Microscopy for a 3D reconstruction of plastic molded electronic
Wolf, Hoffrogge, Wiedenmann, Oberhoff, Kupsch, Krinke, Czurratis
Reliability detection and analysis of elliptical holes corresponding to defects in electrothermal
He Zhang, Li Wang, Jiwen Cui
On the influence of the porosity and hom*ogeneity of sintered die-attach layers on the power cycling
Lukas Mikutta, Frederik Otto, Jörg Schadewald
Aging impact of the SiC Mosfet gate dielectric
Tanguy Phulpin, Alexandre Jaffré, Pascal Chrétien, David Alamarguy
Failure mode competition and long-term reliability in the isothermal aging of sintered Cu joints
J. Xin, X. Lv, Y. Gao, L. Yang, S. Liu, K. Li, M. Zhou, W. Cai, J. Zhang, Y. Liu
Investigating the thermal degradation trends for thermal interface materials in the power converter
Ziheng Wang, Yi Zhang, Huai Wang
PBO Delamination and RDL Corrosion detection on WLCSP Package Products
Klodjan Bidaj, Yong Chen, Jason Chang, Orianne Atance-Loustaunau, Francois Braud
Laser voltage probing and simulation of a flip-flop with undesired quasi-static switching
Angelo Antonio Merassi, Tommaso Melis
Multi-sensor Data Fusion for Prediction of Remaining Useful Life of IGBT Power Modules
M. Votava, K. Debbadi, G. Mondal, S. Nielebock, Y. Pascal, M. Liserre
Effect of Drain Field Plate design and 2DEG density on Dynamic-RON of 650V AlGaN/GaN HEMTs
Cioni et.al
Evolution analysis of mechanical behavior of through‑silicon via under thermal cycling load
Kaihong Hou, Zhengwei Fan, Xun Chen, Shufeng Zhang, Yashun Wang, Yu Jiang
Innovation in copper bond wire package immersion decapsulation technique for stressed SOIC products
Brian Yabut, Rona Balabbo
Discoloration: A Case of Mistaken Identity Callout For Reliability Stressed Palladium Coated Copper (PCC) Wires After Mold Compound
Brian Yabut, Rona Balabbo
Long-Term Positive and Negative Gate Bias Stress Tests on Parallel Connected SiC MOSFETs at -40°C and
A. Deb, M.T.E. Abdelkader, J. Ortiz Gonzalez, P. Mawby, S. Jahdi, O. Alatise
Single Event Irradiation Damage Effect of SiC MOSFETs Based on Degradation of Forward Conduction
Li, Zhen, Li, Yang, Zhang, Zhang, Wang, Sun, Yu, Wang
Stress comparison of several short-circuit types on SiC MOSFET packaging
B. Yu, X. Shi, H. Gao, H. Luo, W. Wang, F. Iannuzzo, W. Li
The Drift in Threshold Voltage and On-Resistance of SiC MOSFETs Induced by AC Bias Temperature
Zicheng Wang, Cen Chen, Boya Zhang, Yifan Hu, Hao Chen, Xuerong Ye, Yaokang Lai
The failure of CW high-power optical elements due to laser beams characteristics
Xinyu Luo, Peng Yang, Qian Li, Jing Qiu, Guanjun Liu
Low-Voltage Schottky p-GaN HEMT Properties under Extreme Repetitive Short-Circuit Operation Conditions : 2DEG Pinch-off, Stability, Aging, Robustness and Failure-Modes
Frédéric Richardeau, Lucien Ghizzo, David Tremouilles, Sébastien Vinnac
Preliminary SiC MOSFET Gate-Cracking Modeling under Short-Circuit Based on Rankine's Damage Energetic Approach Using a Wide Temperature-Range Elastoplastic 2D
Mustafa Shqair, Emmanuel Sarraute, Frédéric Richardeau
Impact of drain-source leakage on the dynamic Ron of power HEMTs with p-GaN gate
Longato et.al
Effect of gate oxide thickness on gate latent damage induced by heavy ion in SiC power MOSFETs
Zhao, Liu, Yan, Hu, Li, Chen, Zhai, Zhang, Cai, Jiao, Sun, Liu
Physics informed Markov chains for remaining useful life prediction of wire bonds in power electronic
Mehdi Ghrabli, Mounira Bouarroudj, Ludovic Chamoin, Emanuel Aldea
Remaining Useful Life Prediction of DC Contactor Based on LSTM
Yu Wang, Yong Xie, Huimin Liang, Hangyu Ma
Comparison of the long-term dynamic Rds(ON) variation and dynamic high temperature operating life test robustness of Schottky gate and ohmic gate GaN HEMT with comparable stress
F. Rauf, M.F. Tayyab, S. Mouhoubi, M. Heldwein, G. Curatola
Study on intermittent fault mechanism of high-density integrated circuits under temperature shock
Wenxiang Yang, Yong Zhang, Kehong Lv, Qiang Guo, Kai Shen, Jing Qiu
Growth of nanovoids in electroless Cu layer of Micro-via after Thermal Reliability Test
Nishijima et.al
Creep tester for quality assessment of solder joints using normal and thermal stress
Jae-Seong Jeong
Heat-resistant durability of AMB substrates for SiC power devices: AlN and Si3N4, which one is thermally
Y.-C. Kim, D.-Y. Yu, S.-i. Kim, Y.-M. Kim, D. Byun, J. Bang, D. Kim
Online Junction Temperature Monitoring of SiC MOSFET Based On The Maximum Drain Current Change Rate During The Process of
Hong Li, Yixiang Zhao, Xiaofei Hu
Efficient Long-term Reliability Assessment of Planar InGaAs/InP Avalanche Photodiodes using Accelerated Step-Stress
Yunseok Han, Sunho Kim, Ilgu Yun
Active Gate Driver for Current Overshoot Suppression of SiC+Si Hybrid Switches with Dynamic gate Current
Ping Liu, Yongjie Liu, Qi Cao, Biao Xiao, Chunming Tu
Optimized Semi-Physical EKV Model for Simulation of SiC MOSFETs
B.D.R. Bonkoungou, R. Gwoziecki, G. Perez, L. Sterna, Z. Khatir
A study of UIS ruggedness of mismatched paralleled SiC MOSFETs
C. Scognamillo, A.P. Catalano, L. Codecasa, A. Castellazzi, V. D'Alessandro
The Use of Filtered High-Energy X-rays and 60Co for TID Testing of a 32-Bit 28nm FDSOI DSP
Urena-Acuna, Favrichon, Ballier, Robin, Gironés, Maraine, Saigné, Boch
Comprehensive LED Reliability Assessment through Integrated Real-Time Visualization, Electrical, and Optical
H.T. Tan, W.A. Sasangka, Y. Gao, K.E.K. Lee, C.V. Thompson, C.L. Gan
Machine learning classification for failure analysis of smart spark plugs
M.L. Hoang, S. Daniele, N. Delmonte, M. Dal Re, P. Cova, D. Santoro
Issues of electronic devices in hostile environment
V. Trabattoni, A. Andreani, M. Lazzaroni, A. Riminucci, D. Santoro, A. Zani
Methodology to estimate the impact of Single Event Transients in Logic
Joshi et.al
14:20-14:40
Lifetime prediction for power modules in wind-energy converters based on temperature variations in a large area substrate solder
N. Zöllner, O. Schilling, D. Übelacker, H.-G. Eckel, T. Heise
14:40-15:00
On the Validity of Rainflow Counting-Based Lifetime Assessment for Power Electronics Assembly
Dawei Zhao, Sebastian Letz, Jürgen Leib, Bernd Eckardt
15:00-15:20
Reliability Prediction of Electronic Components based on Physical of Failure with Manufacturing Parameters
Zijian Guo, Hao Chen, Yifan Hu, Xuerong Ye
15:20-15:40
Reliability prediction of multi-level power supply system based on failure precursor parameters
Weiming Liu, Cen Chen, Wei Zheng, Mingtao Feng, Xuerong Ye, Guofu Zhai
15:40-16:00
A New Methodology of Modeling Conducted Emission Behavioural in System-in-Packages (SiP)
Yifei Zheng, Jianfei Wu, Yanfang Lu, Yang Li, Hongli Zhang, Peiguo Liu
14:20-14:40
Series AC Arc Fault Diagnosis Method Based on Spectrogram and Deep Residual Network
Wenxin Dai, Xue Zhou, Zhigang Sun, Guofu Zhai
14:40-15:00
Condition Monitoring of a DC-Link Capacitor in an Inverter with a front-end diode rectifier under Imbalanced Three-phase Supply
Takuma Yamasoto, Kazunori Hasegawa
15:00-15:20
Analysis and experimental verification of current sharing among parallel-connected dc-link capacitors in a fast-switching
Kazunori Hasegawa, Sakurako Nasu
15:20-15:40
Conducted EMI Assessment of Aging Power Si-MOSFET in 3 phase inverter
M. Tlig, B. Zitouna, M. Hammouda, J. Ben Hadj Slama, M. Kadi
15:40-16:00
High AC load current testing method for power capacitors
Fabian Dresel, Jürgen Leib, Lukas Blamberger, Bernd Eckardt, Martin März
16:20-16:40
Reliability and Failure Analysis of AlGaN/GaN HEMT with NiPtAu and PtAu Gate
Michael Dammann, Peter Brückner, Rachid Driad
16:40-17:00
Study of Trapping Mechanisms Affecting AlGaN/GaN HEMTs adopting AlGaN Back-Barriers with Different Aluminum
Carlotto et.al
17:00-17:20
Nonlinear modelling of AlN/GaN HEMT accounting for Self-biasing effect during RF step stress: analysis and
Said, Saugnon, Harrouche, Medjdoub, Labat, Malbert, Tartarin
17:20-17:40
DC and RF aging test of AlGaN/GaN HEMT technology on SiC substrate
T. Pallaro, T. Dubois, M. De Matos, C. Chang, N. Labat, B. Lambert, N. Malbert
